Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys' patented 1T- SRAM(R) and 1T-FLASH(TM) technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 110 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available at http://www.mosys.com

MoSys Extends Technology Offering Beyond Leading 1T-SRAM Memory IP to Include Mixed Signal Technology Aimed at High Definition DVD, and high-speed serial interfaces for use in a range of communications markets. The ShangShai Design Center which Mosys acquired recently will continue on the network storage product development, to strengthen the design capacity, we are seeking talent on the following positions.